| Autor: |
Vorob'ev, S. A., Popov, D. E., Savushkin, S. E. |
| Zdroj: |
Russian Physics Journal; December 1985, Vol. 28 Issue: 12 p1025-1030, 6p |
| Abstrakt: |
Molecular (111)-plane channeling of fast electrons in silicon is studied. The probability of electron localization along the cross section of the planar channel, the probability of populating molecular quantum states, and the orientational and energy dependence of the output of close electron-atom collisions are calculated. It is predicted that the scintillation occurs in the output of close collisions. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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