| Abstrakt: |
The response of a relaxation inhomogeneous semiconductor (specimen with an injecting contact and/or an inversion layer) containing an impurity with positive correlation energy, to a sudden increase in the electrical field and/or bias lighting is investigated. Under definite conditions the charge-carrier plasma turns out to be unstable relative to charge density wave excitation; their frequencies and damping decrements are found. Under the influence of waves of spatial overcharging of centers with positive correlation energy an increase is possible in the imaginary part of the impedance, as is the appearance of an oscillating frequency dependence of the imaginary and real parts of the impedance. The time dependence of the response is examined, and both exponential and power-law damping is possible depending on the kind of charge carrier forming the wave. |
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