| Autor: |
Agafonnikov, V. F., Gaman, V. I., Glushchuk, S. F., Terekhina, L. I. |
| Zdroj: |
Russian Physics Journal; January 1981, Vol. 24 Issue: 1 p1-5, 5p |
| Abstrakt: |
Structures of the metal-amorphous film of an insulator (or semiconductor)-semiconductor type are being used more and more widely in electronics. Interest therefore attaches to an investigation into the characteristics of such structures based on new insulating and semiconducting materials. In the present paper, the charge transport mechanism in aluminum-amorphous film of Tb2GeS5-germanium structures, which can generate an alternating current in the rf range, is discussed. |
| Databáze: |
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| Externí odkaz: |
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