| Autor: |
Lavrent'eva, L. G., Vilisova, M. D., Gaidareva, S. P., Ivleva, O. M. |
| Zdroj: |
Russian Physics Journal; February 1970, Vol. 13 Issue: 2 p163-166, 4p |
| Abstrakt: |
These results show that when epitaxial films are grown in a closed gas-transport system there are clear correlations among the rate at which material is supplied, the film growth rate, the defectiveness of the film, the doping level, and the properties of the epitaxial p-n junction. The effect of the transportagent concentration on the growth and properties of the epitaxial films must be taken into account in analyzing the properties of epitaxial p-n junctions and heterojunctions. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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