| Autor: |
Geller, I. Kh., Dorin, V. A. |
| Zdroj: |
Russian Physics Journal; June 1968, Vol. 11 Issue: 6 p41-43, 3p |
| Abstrakt: |
The results of single-probe studies of thick and thin silicon p-n junctions are described. The electric fields in a diode with a p+-n junction and in a stabilitron with a p-n junction in the forward and reverse directions are studied. Measurements are made at various currents and temperatures. The p-n junctions are analyzed on the basis of the probe measurements. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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