Effect of neutrons on silicon diodes
| Autor: | Korshunov, V. D., Kostyuchenko, E. A. |
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| Zdroj: | Russian Physics Journal; June 1968, Vol. 11 Issue: 6 p7-9, 3p |
| Abstrakt: | Silicon mesa diodes were exposed to neutrons with an energy of 1 MeV. The integrated neutron flux was 8.5 · 1014 neutrons/cm2. Static voltampere characteristics were plotted using the experimental data. |
| Databáze: | Supplemental Index |
| Externí odkaz: |
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