Growth of aln whiskers during the nitriding of aluminum

Autor: Portnoi, K. I., Gribkov, V. N.
Zdroj: Powder Metallurgy and Metal Ceramics; May 1970, Vol. 9 Issue: 5 p360-363, 4p
Abstrakt: 1.The optimum conditions for AlN whisker growth during the nitriding of aluminum were determined.2.It was established that, with rise in the degree of supersaturation, the thickness of nitride whiskers increases, while their linear growth rate at first increases and then, after passing through a maximum, falls.3.It was demonstrated that preferential whisker growth takes place in those surface areas in the vicinity of which the gaseous phase has high concentration gradients of the material being precipitated.4.It was ascertained that the material transport responsible for the growth of AlN whiskers during the nitriding of aluminum is effected by aluminum vapor entering the gaseous phase as a result of diffusion of aluminum through a surface nitride film.
Databáze: Supplemental Index
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