| Autor: |
Klimenko, A. P., Matveeva, L. A., Tkhorik, Yu. A. |
| Zdroj: |
Czechoslovak Journal of Physics; October 1974, Vol. 24 Issue: 10 p1139-1148, 10p |
| Abstrakt: |
An epitaxial growth of Ge films from molecular beam is characterized by thermodynamical nonequilibrium. This leads to formation of numerous structural defects connected with local levels in the band gap (mainly acceptor-type). Depending on the deposition temperature the density of such levels may change in wide range (1016–1018 cm-3). This determines various mechanisms of impurity conduction. The tails of the density of states in the band gap are also connected with the defect structure of the films. Stresses in heteroepitaxial Ge films result in the splitting of the valence band atk = 0 and in a change of the band gap. Thus, these stresses have influence on the electrical and optical properties of the films. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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