Amorphous semiconducting AsSeI

Autor: Rodot, H., Hrubý, A., Horák, J.
Zdroj: Czechoslovak Journal of Physics; November 1971, Vol. 21 Issue: 11 p1213-1221, 9p
Abstrakt: It is shown on the basis of differential thermal analysis (DTA) of AsSeI samples that a reliable technique ensuring reproducible preparation of vitreous AsSeI has been found. The values of the softening and melting points are 50 °C and 220 °C, respectively.
Databáze: Supplemental Index
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