| Autor: |
Saqib, M., Hampikian, J. M., Potter, D. I. |
| Zdroj: |
Metallurgical and Materials Transactions A; October 1989, Vol. 20 Issue: 10 p2101-2108, 8p |
| Abstrakt: |
Tantalum was implanted with 180 keV Al+ions to fluences up to 3×1018Al+/cm2. Subsequent microchemical and microstructural observations showed that an amorphous layer covered the surface and extended to depths near 3000 Å for fluences above 2.4×1018Al+/cm2. The layer, comprised of ∼70 at. pet Al and ∼30 at. pet Ta, crystallized at temperatures above 500°C. Oxidation measurements, performed in one atmosphere of air and at temperatures below 600°C, showed that the layer stopped oxidation of the implanted tantalum, while unimplanted tantalum oxidized rapidly. The protection provided by the implantation deteriorated somewhat by temperatures near 735°C but still reduced the oxidation rate by a factor of 5. The deterioration is caused by localized rupturing of the implanted layer and the resulting oxidation of the underlying tantalum. At 910°C, the implanted tantalum oxidized almost as rapidly as unimplanted tantalum. |
| Databáze: |
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| Externí odkaz: |
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