| Autor: |
Pyatnitskii, M. Yu., Koval', I. F., Mel'nik, P. V., Nakhodkin, N. G., Afanas'eva, T. V. |
| Zdroj: |
Theoretical and Experimental Chemistry; May 1996, Vol. 32 Issue: 3 p148-151, 4p |
| Abstrakt: |
It is shown that depositing Bi on an Si(001) surface fills the free broken-bond surface states, whose concentration decreases linearly as the bismuth coating 8 increases up to ?st, = 0.6 monolayer. The bismuth desorption activation energy is constant ? < ?st, (Ed = 2.77 ± 0.1 eV) and decreases for ? > ?st. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
|
Full text from SpringerLink