| Autor: |
Takai, M., Tsien, P., Tsou, S., Röschenthaler, D., Ramin, M., Ryssel, H., Ruge, I. |
| Zdroj: |
Applied Physics A: Materials Science & Processing; June 1980, Vol. 22 Issue: 2 p129-136, 8p |
| Abstrakt: |
Abstract: CW CO2-laser annealing of arsenic implanted silicon was investigated in comparison with thermal annealing. Ion channeling, ellipsometry, and Hall effect measurements were performed to characterize the annealed layers and a correlation among the different methods was made. The laser annealing was done with power densities of 100 to 640 W cm−2 for 1 to 20 s. It was found that the lattice disorder produced during implantation can be completely annealed out by laser annealing with a power density of 500 W cm−2 and the arsenic atoms are brought on lattice sites up to 962%. The maximum sheet carrier concentration of 61015 cm−2 was obtained for 11016 cm−2 implantation after laser annealing, which was up to 33% higher than that after thermal annealing at 600 to 900C for 30 min. |
| Databáze: |
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