| Autor: |
Meléndez-Lira, M., Hernández-Calderón, I., Niles, D. W., Höchst, H. |
| Zdroj: |
Applied Physics A: Materials Science & Processing; March 1994, Vol. 58 Issue: 3 p219-222, 4p |
| Abstrakt: |
CdTe films have been grown on top of GaAs(100) by means of Molecular Beam Epitaxy (MBE) at 300 °C substrate temperature. Different procedures for the CdTe growth and for the preparation of the GaAs substrates resulted in diverse crystalline qualities of the CdTe films. We present the results obtained from PhotoReflectance (PR) measurements of these films employing HeNe and Ar-ion lasers as modulating excitation. For Ar excitation, the ratio of CdTe to GaAs signal strength for the E0 transition is enhanced, allowing a differentiation of the contributions from film and substrate. Both the PR line shape and intensity are correlated to the structural quality of the CdTe films. One of the samples presented a below-band-gap transition of the GaAs substrate around 30±5 meV from E0 which is attributed to donor states produced by Te atoms diffused in the interface; this result demonstrates the high sensitivity of the photoreflectance technique to the structural properties of interfaces. |
| Databáze: |
Supplemental Index |
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