Modified methods for the calculation of real Schottky-diode parameters

Autor: Gromov, D., Pugachevich, V.
Zdroj: Applied Physics A: Materials Science & Processing; September 1994, Vol. 59 Issue: 3 p331-333, 3p
Abstrakt: Two methods are described to determine the Schottky-diode parameters from forward I-V characteristics. The first method includes the presentation of the standard I=f(V) function as V=f(I) and the determination of the factors C0, C1, C2 of this function that provides the calculation of the Schottky-diode ohmic component R, the barrier height ? and the ideality factor n. The second method is based on a similar application of the special function proposed by Norde. These methods permit the automation of the measurement process. The possible dependence based on the experimental data between Schottky-diode quality and series resistance is shown.
Databáze: Supplemental Index