UV excimer laser photochemistry of hybrid organometallic compounds of gallium

Autor: Zhang, Y., Cleaver, W. M., Stuke, M., Barron, A. R.
Zdroj: Applied Physics A: Materials Science & Processing; September 1992, Vol. 55 Issue: 3 p261-268, 8p
Abstrakt: The gas phase ultraviolet (UV) excimer laser induced photolysis of the gallium-alkyls Ga(t-C4H9)n- (CH3)3-n (n=0, 1, 2, 3) was studied, using photolysis wavelengths of 308, 248, and 193 nm. The photofragments Ga, GaH, and GaCH3 were detected by laser ionization time-of-flight mass spectroscopy, while the hydrocarbon products CH4, C2H6, HC(CH3)3 and H2C=C(CH3)2 were identified using Fourier transform infrared (FTIR) spectroscopy. The formation of the GaH photofragment, and a high olefin-to-alkane product ratio, for Ga(t-C4H9)2(CH3) and Ga(t-C4H9)3 are interpreted to indicate a ß-hydrogen elimination process. However, ß-hydrogen elimination only occurs after fission of the weakest Ga-C bond, thus no ß-hydride elimination is observed for Ga(t-C4H9)(CH3)2. Detection of C2H6 for Ga(CH3)3 and Ga(t-C4H9)(CH3)2, but not for Ga(t-C4H9)2(CH3), shows that under our experimental conditions the formation of ethane is as a result of the reductive elimination of the methyl groups, and is not due to the recombination of two free methyl radicals.
Databáze: Supplemental Index