| Autor: |
Emel'yanov, V. I., Soumbatov, A. A. |
| Zdroj: |
Applied Physics A: Materials Science & Processing; February 1992, Vol. 54 Issue: 2 p196-199, 4p |
| Abstrakt: |
A novel (defect-deformational) mechanism for subboundary formation in laser beam recrystallization of semiconductor films is proposed. The theory is developed yielding explicit analytical expressions for the distance between subboundaries as a function of film thickness and the scanning velocity of the laser beam. The theoretical results obtained agree well with the experimental results. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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