Crystallization features of silicon layers on thermo-insulated substrates under nanosecond laser radiation

Autor: Batishche, S. A., Demchuk, A. V., Kuz'muk, A. A., Labunov, V. A., Mostovnikov, V. A., Tatur, G. A.
Zdroj: Applied Physics A: Materials Science & Processing; March 1990, Vol. 50 Issue: 3 p321-324, 4p
Abstrakt: P-Si layers on c-Si substrate with a thermo-insulating coating (TIC) were irradiated by the 50-ns second harmonic of an Nd-glass laser. Time-resolved measurements, optical microscopy (OM) and scanning electron microscopy (SEM) data for samples with a 0.1–0.9 µm p-Si layer and a 0.1 µm SiO2 or 0.16 µm Si3N4 TIC layer show that if the p-Si layers melt throughout the depth the solidification starts from the surface as well as from the rear. The latent heat released upon coarse grain growth from the rear prevents further crystallization near the top surface and results in partial or complete remelting of the solid phase on the surface.
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