| Autor: |
Irene, E. A., Silvestri, V. J., Woolhouse, G. R. |
| Zdroj: |
Journal of Electronic Materials; June 1975, Vol. 4 Issue: 3 p409-427, 19p |
| Abstrakt: |
Transmission electron microscopy (TEM) studies of films prepared in the AlN-Al2O3pseudobinary system by chemical vapor deposition (as described in a companion paper entitled, “Chemical Vapor Deposition of AlxOyNzFilms”) indicates that four different phases can be obtained by altering the NH3/CO2gas ratio and preparation temperature. Films prepared at 900°C yield three polycrystalline phases and an amorphous composition. From zero to 25 at. percent O an AlN phase is observed. Amorphous material is observed from 25 to 47 at. percent O. From 47 to 59 at. percent O an AlxOyNzspinel is observed. At 60 at. percent O (pure Al2O3) an alumina phase is observed (KI phase). For 770°C films the AlN phase is observed from zero to 8 at. percent 0; from 8 to 23 at. percent O the zeta-alumina phase is seen; and at 60 at. percent O the KI alumina phase is again observed. For both the 770 and 900°C films, the grain size of the AlN phase was found to decrease with increasing oxygen content. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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