| Autor: |
Vianco, Paul T., Hlava, Paul F., Kilgo, Alice C. |
| Zdroj: |
Journal of Electronic Materials; July 1994, Vol. 23 Issue: 7 p583-594, 12p |
| Abstrakt: |
The growth kinetics of intermetallic compound layers formed between four hot-dipped solder coatings and copper by solid state, thermal aging were examined. The solders were l00Sn, 50In-50Sn, 100In, and 63Sn-37Pb (wt.%); the substrate material was oxygen-free, high conductivity Cu. The total intermetallic layer of the 100Sn/Cu system exhibited a combination of parabolic growth at lower aging temperatures and t0.42growth at the higher temperatures. The combined apparent activation energy was 66 kJ/mol. These results are compared to the total layer growth observed with the 63Sn-37Pb/Cu system which showed parabolic kinetics at similar temperatures and an apparent activation energy of 45 kJ/mol. Both 100Sn and 63Sn-37Pb diffusion couples showed a composite intermetallic layer comprised of Cu3Sn and Cu6Sn5. The intermetallic compound layer formed between In and Cu changed from a CuIn2stoichiometry at short annealing times to a Cu57In43composition at longer periods. The growth kinetics were parabolic with an apparent activation energy of 20 kJ/mol. The intermetallic layer growth of the 50In-50Sn/Cu system exhibited extreme variations in the layer thicknesses which prohibited a quantitative assessment of the growth kinetics. The layer was comprised of two compounds: Cu26Sn13In8which was the dominant phase and a thin layer of Cu17Sn9In24 adjacent to the solder. |
| Databáze: |
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