| Autor: |
Von Windheim, J., Venkatesan, V., Malta, D., Das, K. |
| Zdroj: |
Journal of Electronic Materials; April 1993, Vol. 22 Issue: 4 p391-398, 8p |
| Abstrakt: |
Abstract: Naturally occurring semiconducting single crystal (type IIb) diamonds and boron doped polycrystalline thin films were characterized by differential capacitance-voltage and Hall effect measurements, as well as secondary ion mass spectroscopy (SIMS). Results for natural diamonds indicated that the average compensation for a type IIb diamond was >17%. Mobilities for the natural crystals varied between 130 and 564 cm2/V�s at room temperature. The uncompensated dopant concentration obtained by C-V measurements (2.8 � 0.1 � 1016 cm−3) was consistent with the atomic B concentration measured by SIMS performed on similar samples (3.0 � 1.5 x 1016 cm−3). Measurement of barrier heights for three different metals (platinum, gold, and aluminum) found essentially the same value of 2.3 � 0.1 eV in each case, indicating that the Fermi level was pinned at the diamond surface. Polycrystalline semiconducting diamond thin films demonstrated a complex carrier concentration behavior as a function of dopant density. This behavior may be understood in terms of a grain boundary model previously developed for polycrystalline silicon, or by considering a combination of compensation and impurity band conduction effects. The highest mobility measured for a polycrystalline sample was 10 cm2/V�s, indicating that electrical transport in the polycrystalline material was significantly degraded relative to the single crystal samples. |
| Databáze: |
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