| Autor: |
Ross, C. A., Drewery, J. S., Somekh, R. E., Evetts, J. E. |
| Zdroj: |
Journal of Electronic Materials; September 1990, Vol. 19 Issue: 9 p911-918, 8p |
| Abstrakt: |
The electromigration lifetime of integrated circuit metallisation is commonly found to increase if the metallisation is covered with a passivation layer such as glass. We have investigated the electromigration behaviour of aluminium conductor stripes under different thicknesses of oxide passivation formed by anodisation. The ionic drift velocity of anodised stripes was measured using the Blech-Kinsbron edge displacement technique (Thin Solid Films25327 (1975)) and it was found that the drift velocity decreased with increasing anodisation thickness. Stripes tested with a reversed current drifted backwards with an initial velocity which exceeded the original forward velocity. These results are related to a change in the self-diffusivity of aluminium as a result of high compressive stresses imposed by the anodised layer, and the distribution of stress in a drifting stripe is discussed. A general conclusion is that passivation layers can support compressive stresses sufficient to retard mechanical failure processes in metallisation in two distinct ways, either by raising the threshold stress for the nucleation of damage such as hillocks or whiskers, or by reducing the diffusivity in the metallisation. |
| Databáze: |
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