| Autor: |
Bottka, N., Gaskill, D. K., Sillmon, R. S., Henry, R., Glosser, R. |
| Zdroj: |
Journal of Electronic Materials; March 1988, Vol. 17 Issue: 2 p161-170, 10p |
| Abstrakt: |
Modulation spectroscopy is an optical characterization tool that can be of great utility to the materials scientist. We present here numerous examples where a simple photo-reflectance and electroreflectance setup is used in our laboratory to determine such important material parameters as alloy composition and carrier concentration in a very short time. For determining alloy composition in semiconductors, contactless room temperature photoreflectance is nearly as sensitive as low temperature photoluminescence. Examples will be given on how to determine: the effects of surface preparation and implant damage; alloy composition and carrier homogeneity for large area wafers to better than 1%; the segregation coefficient of isoelectronic impurities in bulk semiconductors; the sub-band energies in quantum well structures; and the presence and homogeneity of built-in electric fields in MODFET structures. Particular emphasis will be placed on band edge and exciton effects on the photoreflectance and on the criteria used to distinguish between them. Materials studied included Si doped GaAs, AlxGa1-xAs for variousxgrown by OMVPE and MBE, bulk InP doped with iso-electronic As and Sb, and MODFET structures. |
| Databáze: |
Supplemental Index |
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