Materials characteristics of pseudomorphic high electron mobility transistor structures with InxGa1−xas single quantum well and GaAs-InxGa1−xas (0.25 < x < 0.4) thin strained superlattice active layers

Autor: Ballingall, J., Ho, Pin, Martin, P., Tessmer, G., Yu, T., Lewis, N., Hall, E.
Zdroj: Journal of Electronic Materials; June 1990, Vol. 19 Issue: 6 p509-513, 5p
Abstrakt: Abstract: Growth and characterization results are presented for pseudomorphic high electron mobility transistor structures with InxGa1-xAs single quantum well and GaAs(h 1)In x Ga1−x As(h 2) thin strained superlattice active layers where 0.25≤x ≤ 0.4. All of the samples were grown by molecular beam epitaxy. Hall effect at 77 K, photoluminescence at 2 K, in-situ reflection high energy electron diffraction, and transmission electron microscopy measurements are discussed. Critical layer thickness measurements are compared with the Matthews-Blakeslee theory. Photoluminescence transition energies are compared with a self-consistent solution to Schrodinger’s and Poisson’s equations.
Databáze: Supplemental Index
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