| Autor: |
Wu, C. P., McGinn, J. T., Hewitt, L. R. |
| Zdroj: |
Journal of Electronic Materials; November 1989, Vol. 18 Issue: 6 p721-730, 10p |
| Abstrakt: |
The effects of preamorphization of silicon by19F,28Si and74Ge implants preceding11B implants have been investigated in this work and compared with BF2molecular implants. For shallow boron implanted layers less than 0.2 μm deep, the beam purity of BF2implants is crucial as well as proper preamorphization of the silicon to eliminate any inadvertent channeling. Preamorphization of silicon can be achieved with either74Ge,28Si or19F implants. Data from SIMS, TEM, RBS and diode leakage current measurements have all consistently shown that the best results are obtained with74Ge preamorphization, followed by28Si- and19F-preamorphization. RTA of preamorphized silicon at 1000° C for 10s in a dry argon ambient is preferred for shallow junctions. Furnace anneals at 950° C for 45 min of74Ge preamorphized samples have resulted in practically perfect PN junctions. |
| Databáze: |
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| Externí odkaz: |
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