| Autor: |
Hyder, S. B., Holloway, C. J. |
| Zdroj: |
Journal of Electronic Materials; May 1983, Vol. 12 Issue: 3 p575-585, 11p |
| Abstrakt: |
The high partial pressure of phosphorus at the stoichiometric melting point of InP precludes the in-situ synthesis in the puller by simple admixture of indium and phosphorus. This paper describes a system that was considered for the in-situ synthesis and growth of InP single crystal, utilizing the phosphorus vapor injection method. The advantages of this two-heater side-by-side injection synthesis system is dis-cussed and the effect of chamber pressure and phosphorus temperature on the InP synthesis yield is described. The procedures used for in-situ synthesis and growth are also described. Electrical and optical properties of LEC cry-stals grown by in-situ synthesis compare favorably with those of crystals grown from polycrystalline charges synthe-sized with the high-pressure autoclave or the gradient freeze method. |
| Databáze: |
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