| Autor: |
Howard, R. M., Jeffery, R. D., Hullett, J. L. |
| Zdroj: |
Optical and Quantum Electronics; March 1987, Vol. 19 Issue: 2 p123-129, 7p |
| Abstrakt: |
Noise measurements on high-transimpedance amplifiers suitable for long-wavelength OTDRs give results higher than is predicted by normal noise models. Consequently, we have developed two useful techniques to measure independently the noise contribution of the JFET and the feedback resistor to the overall amplifier noise. p ]Our results show that the noise of the JFET is in accordance with an accurate theoretical model for such a device. In contrast, the noise from the feedback resistor is much higher than is predicted from the normal resistance-capacitance model for such a component. This increase results from the distributed nature of high-ohmic resistors. Our results indicate that both choice of resistor manufacturer and individual selection of a resistor from a specific manufacturer are warranted. By selecting a low-noise resistor we demonstrate a 500-MΩ transimpedance amplifier with an input equivalent noise current of 13.8 pA. In comparison, the same amplifier with a noisy resistor had an input equivalent noise current of 23 pA. p ]We use our results to show that a reasonable value of the input equivalent noise current of a low-noise photodiode-amplifier combination is 20 pA. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
|
Full text from SpringerLink