| Autor: |
Bryan, R. P., Coleman, J. J., Averback, R. S., Klatt, J. L., Miller, L. M., Cockerill, T. M. |
| Zdroj: |
Optical and Quantum Electronics; January 1991, Vol. 23 Issue: 7 pS967-S974, 8p |
| Abstrakt: |
In recent years considerable interest has been shown in impurity-induced compositional disordering of III–V compound semiconductor devices, especially in efforts directed towards fabricating index-guided buried heterostructure lasers and other unique photonic and electronic devices. In this work we describe the study of compositional disordering induced by MeV implantation of oxygen and krypton into AlAs-GaAs superlattices and the fabrication of index-guided quantum well heterostructure lasers by MeV oxygen ion implantation. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
|
Full text from SpringerLink