| Autor: |
Mattauch, R. J., Crowe, T. W. |
| Zdroj: |
International Journal of Infrared and Millimeter Waves; October 1987, Vol. 8 Issue: 10 p1235-1241, 7p |
| Abstrakt: |
Conclusion The above analyses assume the absence of excess noise in the Schottky barrier mixer diode. Achievement of such a condition is dependent not only on the absence of interfacial stress in the device structure, but also on device surface properties. Reduction of excess noise caused by these two mechanisms is discussed by Sherrill, et al.,(10) and Kattman, et al.(11) |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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