| Autor: |
Kortov, V. S., Zatsepin, A. F., Ushkova, V. I. |
| Zdroj: |
Physics and Chemistry of Minerals; March 1985, Vol. 12 Issue: 2 p114-121, 8p |
| Abstrakt: |
The possibilities of exoelectron spectroscopy to investigate defects in dielectrics are demonstrated for phenakite Be2SiO4, its structural analogs Zn2 SiO4, Be2GeO4, solid solutions Be2Si1-xGexO4 (x=0÷1) and a-quartz. Emission maxima at 330 and 670 K in phenakite have been found to be due to [GeO4]5- andE' centers, respectively. Structural disturbances in the silicon and oxygen positions have been shown to control the exoemission activity of the crystals. Radiation induced decrease of exoemission activity connected with generation ofE' centers by neutron irradiation has been discovered. The energy level scheme of active centers in the subsurface region of Be2SiO4 has been established. |
| Databáze: |
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