| Autor: |
Oh Hwang, Seon, Sung Kim, Han, Park, Seong-Hun, Park, Jeunghee, Yong Bae, Seung, Kim, Bongsoo, Young Park, Ja, Lee, Gangho |
| Zdroj: |
The Journal of Physical Chemistry - Part C; February 2008, Vol. 112 Issue: 8 p2934-2942, 9p |
| Abstrakt: |
Straight and zigzagged Ga1-xMnxN (0 ≤ x≤ 0.05) nanowires were selectively synthesized by the vapor transport method, using different growth temperature. They consisted of single-crystalline wurtzite GaN nanocrystals grown along the 100 and 0001 directions for the straight and zigzagged morphologies, respectively. The lattice constant, c, decreases initially with increasing amount of Mn doping (x), and then increases as xincreases above 0.03. X-ray photoelectron spectroscopy revealed that as the Mn content increases to x0.02, the binding energy of Ga 2p shifts to a higher energy, suggesting the possibility of hybridization between the Mn2ions and host defects. X-ray absorption spectroscopy and X-ray magnetic circular dichroism confirmed that the Mn2ions substitute into the tetrahedrally coordinated sites. The magnetization measurement revealed that all of these nanowires exhibited room-temperature ferromagnetic behaviors, most significantly for the straight nanowires grown with the 100 direction, having x0.02−0.03. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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