| Autor: |
Boiko, B. T., Kopach, G. I., Khripunov, G. S. |
| Zdroj: |
Inorganic Materials; May 2000, Vol. 36 Issue: 5 p527-528, 2p |
| Abstrakt: |
By evaporating undoped CdTe layers onto indium tin oxide (ITO), followed by a layer of In or CrOx, back-effect photovoltaic cells In/CdTe/ITO and CrOx/CdTe/ITO were prepared. It was shown that reducing the area of grain boundaries in CdTe, bringing the space-charge region farther away from the defect-rich region at the CdTe/ITO interface, and employing CrOxinstead of In back contacts raise the quantum efficiency of the devices to 6%. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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