| Autor: |
Gaskell, J. M., Jones, A. C., Chalker, P. R., Werner, M., Aspinall, H. C., Taylor, S., Taechakumput, P., Heys, P. N. |
| Zdroj: |
Chemical Vapor Deposition; December 2007, Vol. 13 Issue: 12 p684-690, 7p |
| Abstrakt: |
Thin films of lanthanum zirconium oxide, LaxZr1–xO2–δ(x= 0.09 – 0.77) are deposited by liquid injection metal‐organic (MO)CVD and atomic layer deposition (ALD) using toluene solutions of the precursors [(iPrCp)3La] and [(MeCp)2ZrMe(OMe)]. Auger electron spectroscopy (AES) shows that LaxZr1–xO2–δfilms grown by ALD at 300 °C contain carbon at levels of 3.2 – 5.4 at.‐ %, whilst films grown by MOCVD at 400 °C contain carbon levels of 2.4 – 10.5 at.‐ %. Analysis by X‐ray diffraction (XRD) shows that films with lower La contents (x) of 0.09 and 0.22 crystallize into cubic lanthanum‐stabilized zirconia phase on annealing at 700 °C, whereas films of higher La content (x= 0.35, 0.63) remain amorphous. In general, the onset of crystallization of these films increases with the lanthanum fraction. For x= 0.35, crystallization to the cubic phase of ZrO2is observed between 800 and 900 °C. LaxZr1–xO2–δfilms grown by ALD show good dielectric properties with low hysteresis voltages, negligible flatband voltage shifts, and kvalues ranging from 11 to 14. LaxZr1–xO2–δfilms grown by ALD have leakage current densities of 2.6 × 10–6– 5.3 × 10–7A cm–2, while films grown by MOCVD have leakage current densities of between 1.1 × 10–6A cm–2and 8.3 × 10–7A cm–2. |
| Databáze: |
Supplemental Index |
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