| Autor: |
Davydov, V., Lanskaya, O., Lilenko, E., Nesmelov, S. |
| Zdroj: |
Russian Physics Journal; May 1998, Vol. 41 Issue: 5 p472-475, 4p |
| Abstrakt: |
Abstract: The photoelectric properties of MOS structures having compensation regions near the field electrode have been studied experimentally. It is shown that the presence of such regions can lead to the appearance of a number of features in the integrated photoelectric properties: the presence of a large photovoltage signal in enhancement, dependence of the form of the photovoltage frequency dependence on the intensity of the light flux, and distortion of the shape of the photovoltage signal in inversion. The presence of compensation regions can be established using measurements of the distribution of the photovoltage over the area of the structure and measurements of the voltage dependence of the phase of the integrated photovoltage signal. The increase or decrease of the photovoltage signal in enhancement after exposure to a weak magnetic field is due to the rearrangement of the impurity-defect structure in the near-surface layer of the semiconductor, leading to the appearance of compensated semiconductor regions near the field electrode. |
| Databáze: |
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