| Autor: |
de Koning, Henk, Zandbergen, Peter, Verheijen, Martin J., Biermann, Udo K.P. |
| Zdroj: |
Microelectronic Engineering; February 1995, Vol. 27 Issue: 1-4 p421-424, 4p |
| Abstrakt: |
With E-beam exposures, the resolution limits of structures in resists are usually determined by electron scattering through resist and substrate, limiting the aspect ratios. The experimental results presented in this paper indicate, that when AZ-PF514 E-beam resist is exposed with high doses, it changes its behaviour from positive tone to negative tone. As it seems, mainly the primary beam is then responsible for resist patterning. As a result, high aspect ratio resist structures have been fabricated, with widths down to 70 nm and heights up to 3 μm. The resist structures fabricated in this manner show good behaviour in terms of plasma etching stability and can also be applied for replication purposes. The structures can easily be made with both positive and negative resist slopes, well suited for lift-off techniques. With this technique well defined 3-D resist structures were obtained. |
| Databáze: |
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| Externí odkaz: |
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