| Autor: |
Bijkerk, F., Shmaenok, L.A., Shevelko, A.P., Bastiaensen, R.K.F.J., Bruineman, C., van Honk, A.G.J.R. |
| Zdroj: |
Microelectronic Engineering; February 1995, Vol. 27 Issue: 1-4 p299-301, 3p |
| Abstrakt: |
Experimental results are reported on the development of a low-contamination laser-plasma source for extreme ultra-violet lithography (EUVL). The results concern the intensity in the 12.5 to 15.5 nm wavelength range and the pollution of EUV optics by plasma debris. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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