| Autor: |
Georgobiani, A. N., Aminov, U. A., Dravin, V. A., Ilyukhina, Z. P. |
| Zdroj: |
Inorganic Materials; February 2000, Vol. 36 Issue: 2 p119-122, 4p |
| Abstrakt: |
Photoluminescence bands ascribed to nitrogen were observed in the layers prepared by N+ion implantation into ZnSe crystals, followed by heat treatment in atomic oxygen or nitrogen. The ionization energy of the shallow donorNSewas found to be about 105 meV.p-ZnO/p-ZnSe:N/n-ZnSe structures emitting light at forward biases of ≥3 V were prepared. The emission bands in the photo- and electroluminescence spectra were assigned. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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