| Autor: |
Sorbier, J., Tortel, H., Schlenker, C., Guyot, H. |
| Zdroj: |
Journal de Physique I; February 1995, Vol. 5 Issue: 2 p221-233, 13p |
| Abstrakt: |
Electron tunneling studies have been performed on junctions made with the quasi bidimensional oxide ?-Mo4O11and a lead film sepearted by an insulating oxide layer. The density of states in the vicinity of the Fermi level has been obtained along two directions (parallel and perpendicular to the layers) in the temperature range 1?K-90?K. The data from the differential conductance as a function of dc bias voltage are consistent with gap openings taking place at Tp1=100?K and Tp2= 30?K. Both electron instabilities are attributed to charge density waves and the anisotropy of the density of states is related to the anisotropy of the Fermi surface. For tunneling current in the plane of the layers, weak oscillations are found in the density of states at low temperatures. They are possibly due to the existence of several types of small electron and hole pockets induced on the Fermi surface by the charge density wave gap openings. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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