| Autor: |
Simon, J.-C., DoussiE´re, P., Pophillat, L., Fernier, B. |
| Zdroj: |
Electronics Letters; March 1989, Vol. 25 Issue: 7 p434-436, 3p |
| Abstrakt: |
The spectral dependence of the gain and noise characteristics of a gas source molecular beam epitaxy (GSMBE)-grown BH-GaInAsP near-travelling-wave semiconductor laser amplifier are presented, from which an indication of nonresonant internal losses is given. An intrinsic noise figure of 6 dB at an internal gain of 28 dB is obtained. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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