| Autor: |
Merchant, Sailesh M., Kang, Seung H., Sanganeria, Mahesh, van Schravendijk, Bart, Mountsier, Tom |
| Zdroj: |
JOM Journal of the Minerals, Metals and Materials Society; June 2001, Vol. 53 Issue: 6 p43-48, 6p |
| Abstrakt: |
Copper/low-k dielectric materials have been rapidly replacing conventional aluminum-alloy/SiO2-based interconnects in today’s semiconductor devices. This paper reviews the advantages of transitioning to copper/low-k interconnects. Materials and process challenges during the fabrication of devices with copper/low-k interconnects are discussed. Reliability concerns associated with such devices are highlighted. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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