| Autor: |
Ho, Chong-Long, Ho, Wen-Jeng, Wu, Meng-Chyi, Liaw, Jy-Wang |
| Zdroj: |
Electronics Letters; September 1999, Vol. 35 Issue: 20 p1767-1768, 2p |
| Abstrakt: |
The authors have fabricated planar InGaAs pin photodiodes designed for high-speed operation with rear metallic reflectors. The effectiveness of both Ti/Pt/Au and Au reflectors for enhancing the photoresponse of InGaAs pin photodiodes is evaluated. The experimental results show that an InGaAs pin photodiode with a 1 µm absorption layer can achieve a responsivity > 0.9 A/W (~86% quantum efficiency) at 1.3 µm wavelength with an Au reflector but can achieve only ~0.8 A/W (~76% quantum efficiency) with a Ti/Pt/Au reflector. Furthermore, the reflectivity of both metallic mirrors (~0.9 for Au and ~0.4 for Ti/Pt/Au) is extracted using a simple theoretical model. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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