| Autor: |
Ustinov, V.M., Zhukov, A.E., Egorov, A.Yu., Kovsh, A.R., Zaitsev, S.V., Gordeev, N.Yu., Kopchatov, V.I., Ledentsov, N.N., Tsatsul'nikov, A.F., Volovik, B.V., Kop'ev, P.S., Alferov, Z.I., Ruvimov, S.S., Liliental-Weber, Z., Bimberg, D. |
| Zdroj: |
Electronics Letters; April 1998, Vol. 34 Issue: 7 p670-672, 3p |
| Abstrakt: |
Self-organised InAs quantum dots inserted in an (In, Ga)As matrix lattice matched to an InP substrate are used as an active region in an injection laser. Low threshold (11.4 A/cm2) lasing at 1.894 µm (77 K) via the states of the quantum dots is obtained. A material gain of the order of 104 cm–1 is estimated. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
|
