| Autor: |
Konakova, R. V., Tkhorik, Yu., Shakhovtsov, V. I. |
| Zdroj: |
Radiation Effects and Defects in Solids; January 1982, Vol. 60 Issue: 1 p143-146, 4p |
| Abstrakt: |
The effect of y-irradiation on the electrical and iecombination properties of Pt-nn+GaAs Schottky diodes, pGe-nn+GaAs heterodiodes and p+nn+GaAs diffusion diodes was studied foi doses between 106 and 2 x lop R. It was shown tha. the middle doses of irradiation led to an increase in the diffusion length of the minority carriers and in the efficiency of the IMPATT diodes. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
|
