Flux and fluence dependence of disorder produced during implantation of 11B in silicon
| Autor: | Eisen, F. H., Welch, B. |
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| Zdroj: | Radiation Effects and Defects in Solids; January 1971, Vol. 7 Issue: 1 p143-148, 6p |
| Abstrakt: | The flux and fluence dependence of disorder produced in silicon during the implantation of 11B has been investigated at room temperature, -50°C. and -120°C. Implantations were carried out with 200 keV 11B ions using current densities in the range from 0.06μA/cm2 to 15μA/cm2, and the disorder monitored by measuring the energy spectra of backscattered protons which were incident on the sample at 450 keV parallel to a (110) axis. Significant differences in the dependence of the disorder on 11B flux and fluence were observed between the implantations performed at room temperature and those carried out at the two lower temperatures. |
| Databáze: | Supplemental Index |
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