Implantation angle influence on penetration of boron channelled ions into silicon
| Autor: | Gverdtsiteli, I. G., Guldamashvili, A. I., Diasamidze, E. M., Zaslavsky, S. A., Kalinin, A. N., Kumakhov, M. A., Muralev, V. A. |
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| Zdroj: | Radiation Effects and Defects in Solids; January 1973, Vol. 19 Issue: 3 p171-174, 4p |
| Abstrakt: | Experiments on the dependence of penetration of boron ions channelled into silicon are described. |
| Databáze: | Supplemental Index |
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