| Autor: |
Kadam, R.M., Sastry, M.D., Iyer, R.M., Gopalakrishnan, I.K., Yakhmi, J.V. |
| Zdroj: |
Philosophical Magazine B; April 1997, Vol. 75 Issue: 4 p503-508, 6p |
| Abstrakt: |
AbstractOur electron paramagnetic resonance (EPR) investigation of the intrinsic semiconductor UMo6S8in the temperature range 10-100 K has revealed the resonance due to U4+with a strong temperature-dependent gshift. This is due to the dynamic averaging of EPR signals between the static 5f2state of U4+and the conduction electrons. The energy gap ΔEg, between the U 5f levels and the conduction band in UMo6S8can be estimated from the temperature dependence of the gshift to be 0.0165eV. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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