Twin intersections in silicon on sapphire
Autor: | Batstone, J. L. |
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Zdroj: | Philosophical Magazine B; May 1991, Vol. 63 Issue: 5 p1037-1050, 14p |
Abstrakt: | Twin intersections and terminations have been examined in epitaxial films of silicon on sapphire by high-resolution electron microscopy. Twins are found to propagate to the Si surface or to terminate within the bulk. Termination occurs either at {112} twin boundaries or by intersection with a second twin. Intersection results in the formation of segments of Σ9 {111}/{115} and {114} boundaries. Removal of twin boundaries during high-temperature annealing is shown to be thermally activated and a grain boundary migration mechanism is discussed. |
Databáze: | Supplemental Index |
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