Twin intersections in silicon on sapphire

Autor: Batstone, J. L.
Zdroj: Philosophical Magazine B; May 1991, Vol. 63 Issue: 5 p1037-1050, 14p
Abstrakt: Twin intersections and terminations have been examined in epitaxial films of silicon on sapphire by high-resolution electron microscopy. Twins are found to propagate to the Si surface or to terminate within the bulk. Termination occurs either at {112} twin boundaries or by intersection with a second twin. Intersection results in the formation of segments of Σ9 {111}/{115} and {114} boundaries. Removal of twin boundaries during high-temperature annealing is shown to be thermally activated and a grain boundary migration mechanism is discussed.
Databáze: Supplemental Index