| Autor: |
Mort, J., Okumura, K., Machonkin, M. |
| Zdroj: |
Philosophical Magazine B; May 1991, Vol. 63 Issue: 5 p1031-1036, 6p |
| Abstrakt: |
Detailed studies are reported for the temperature dependence of nominally undoped and boron-doped diamond thin films over the temperature range 400 to 150K; boron doping concentrations in the films range from 20 to 968 parts per million. In all samples, no single-valued activation energy is observed although the dependence on temperature systematically decreases with increasing boron con-centration. This suggests that the acceptor states introduced by the boron are themselves energetically situated in a relatively high density of impurity or defect states extending from the valence band edge. It is believed that charge transport in these films involves a combination of extended-state conduction and hopping within these distributions of localized states and evidence of impurity band formation is observed. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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