| Autor: |
Belin, Esther, Senemaud, Christiane, Guita, Sadreddine |
| Zdroj: |
Philosophical Magazine B; May 1991, Vol. 63 Issue: 5 p1159-1168, 10p |
| Abstrakt: |
The Ge and Se s-d conduction states in GexSe1-x glasses have been probed by studying the X-ray photoabsorption spectra at the L3 edges of Ge and Se. The experimental results show that Ge s and Se s states are totally mixed at the bottom of the conduction band; however, Ge s states seem to be predominant. As x varies, the low-energy limit of these states remain unchanged. Within the energy range of 5 eV above EF, both Ge s and Se s electronic distributions are found to be very sensitive to the local atomie arrangement; the results are discussed in relation with existing density-of-states calculations performed for amorphous GeSe with 3:3 or 4.2 coordinations. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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