| Autor: |
Spriet, J. P., Biskupski, G., Dubois, H., Briggs, A. |
| Zdroj: |
Philosophical Magazine B; September 1986, Vol. 54 Issue: 3 p95-99, 5p |
| Abstrakt: |
We present results on the low-temperature resistivity of n-type InP, with an impurity concentration n just below the critical concentration, nc, for the metal-insulator transition. A detailed study of the influence of magnetic fields between 0 and 3·5 T gives evidence for an insulator-metal transition followed by the usual metal-insulator transition. These results are in agreement with a new phase diagram incorporating localization by shrinkage of orbits at high magnetic fields and delocalization due to interference effects at low magnetic fields. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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