| Autor: |
Karpushko, F. V., Bystrimovich, S. A., Goncharenko, A. M., Porukevich, S. A., Sinitsyn, G. V., Utkin, I. A. |
| Zdroj: |
Journal of Modern Optics; July 1992, Vol. 39 Issue: 7 p1593-1598, 6p |
| Abstrakt: |
A strong dispersive nonlinearity below the band gap in heavily doped bulk n-GaAs is observed for differnet donor impurities. Negative refractive index changes of up to -5 × 10-3 are obtained in the spectral range 880-900 nm, induced by light of the same wavelength at an incident intensity of about 5 × 105 W cm-2. Since the lifetime of the nonlinearity is ∼ 10-10 s, it is suggested that a bistable device exploiting this effect could be constructed with a switching energy of (1-5) × 10-14 J μm-2. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
|
